M. Rekas et Z. Szklarski, DEFECT CHEMISTRY OF ANTIMONY DOPED SNO2 THIN-FILMS .1. MECHANISM OF SB INCORPORATION INTO SNO2 LATTICE, Bulletin of the Polish Academy of Sciences. Chemistry, 44(3), 1996, pp. 155-162
Sb-doped SnO2 thin films were deposited onto Coming 7059 plates by rf
reactive co-sputtering method. The mechanism of antimony incorporation
into SnO2 lattice in thin films was studied. Chemical composition of
thin films was determined by X-ray microanalysis. Phase composition wa
s studied by X-ray diffraction and Mossbauer effect. SnO2 : Sb films a
re 10-300 nm thick and contain up to 5.6 at% Sb. Below 2.5 at% Sb inco
rporates substitutionally into Sn4+ sites. For higher concentration, t
he several phenomena as segregation, defect complexes, etc. accompanie
d the incorporation of antimony.