DEFECT CHEMISTRY OF ANTIMONY DOPED SNO2 THIN-FILMS .1. MECHANISM OF SB INCORPORATION INTO SNO2 LATTICE

Citation
M. Rekas et Z. Szklarski, DEFECT CHEMISTRY OF ANTIMONY DOPED SNO2 THIN-FILMS .1. MECHANISM OF SB INCORPORATION INTO SNO2 LATTICE, Bulletin of the Polish Academy of Sciences. Chemistry, 44(3), 1996, pp. 155-162
Citations number
35
Categorie Soggetti
Chemistry
ISSN journal
02397285
Volume
44
Issue
3
Year of publication
1996
Pages
155 - 162
Database
ISI
SICI code
0239-7285(1996)44:3<155:DCOADS>2.0.ZU;2-F
Abstract
Sb-doped SnO2 thin films were deposited onto Coming 7059 plates by rf reactive co-sputtering method. The mechanism of antimony incorporation into SnO2 lattice in thin films was studied. Chemical composition of thin films was determined by X-ray microanalysis. Phase composition wa s studied by X-ray diffraction and Mossbauer effect. SnO2 : Sb films a re 10-300 nm thick and contain up to 5.6 at% Sb. Below 2.5 at% Sb inco rporates substitutionally into Sn4+ sites. For higher concentration, t he several phenomena as segregation, defect complexes, etc. accompanie d the incorporation of antimony.