DEFECT CHEMISTRY OF ANTIMONY DOPED SNO2 THIN-FILMS .2. ELECTRICAL-PROPERTIES

Electrical properties as well as defect chemistry of antimony doped Sn O2 thin films deposited by rf reactive co-sputtering method were studi ed. The measurements of both de and ac electric conductivity, Hall eff ect; work function of electrons using Kelvin-Zinsmann method were carr ied out. These studies proved that for concentration above 2.5 at % Sb , the interaction thin film-oxygen may be interpreted in terms of the bulk defect chemistry. For lower concentration of Sb the surface-traps -limited conductivity is possible.