Growth morphology and compositional analysis of InxGa1-xSb crystals-grown by vertical directional solidification technique

InxGa1-xSb (x = 0.5) single crystals of 12 mm diameter and 50-60 mm length have been grown from stoichiometric source materials by using vertical dire ctional solidification technique. The optimized growth conditions are ampou le translation velocity 0.84 mu m/sec, rotation speed 10 rpm and ampoule wi th argon pressure (100 torr). The axial compositional profile has been dete rmined by Vegard-law and showed mixing of the melt. Hall measurements revea l the conversion of n-type to p-type conduction along the growth axis and v ice versa. Radial resistivity measurements by foul probe exhibited the near ly homogeneous growth. The growth morphology was attributed to the intrinsi c crystallographic microstructures.