I-V, C-V and DLTS studies in Au/n-Si : Pd Schottky diodes

Authors
Reddy, SV Reddy, VR Reddy, PN Reddy, BPN Rao, KSRK
Citation
Sv. Reddy et al., I-V, C-V and DLTS studies in Au/n-Si : Pd Schottky diodes, I J PA PHYS, 37(8), 1999, pp. 612-615
Citations number
14
Categorie Soggetti
Physics
Journal title
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
ISSN journal
00195596 → ACNP
Volume
37
Issue
8
Year of publication
1999
Pages
612 - 615
Database
ISI
SICI code
0019-5596(199908)37:8<612:ICADSI>2.0.ZU;2-9
Abstract
Deep Level Transient Spectroscopy (DLTS) technique has been used to study d eep levels in palladium doped n-type silicon. The deep level due to Pd in n -type Si has been observed at Ec-0.22 eV with the carrier capture cross-sec tion of 31E-16 cm(2). The results are in agreement with the previous result s in Pd-doped samples. Also C-V and I-V studies have been carried out in th e Au/n-Si: Pd Schottky diodes.