Temperature-dependent characteristics of the inverted delta-doped V-shapedInGaP/InxGa1-xAs/GaAs pseudomorphic transistors

The temperature-dependent characteristics of InGaP/InxGa1-xAs/GaAs pseudomo rphic transistors with an inverted delta-doped V-shaped channel have been s tudied. Due to the presented wide-gap InGaP Schottky layer and the V-shaped channel structure, the degradation of device performance with increasing t he temperature is not so significant. Experimentally, for a 1 x 100 mu m(2) device, the gate-drain voltages at a gate leakage current of 260 mu A/mm a nd the maximum transconductances g(m.max) are 30 (22.2) V and 201 (169) mS/ mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high g(m) f(T) and f(max) are obtained.