Growth of III2VI3 compound semiconductor (GaxIn1-x)(2)Se-3 single crystalswith giant optical activity for visible and infrared light

High grade single crystals of (GaxIn1-x)(2)Se-3 showing giant optical activ ity for visible and infrared light have been successfully grown with an iod ine transport technique. Two kinds of single crystals with reverse rotatory directions to each other have been obtained; one is the dextrorotatory wit h space group P6(1) and another is the levorotatory with P6(5). The composi tion x is controlled from 0.03 to 0.70. The morphology is hexagonal plate a nd the size is up to 3 mm in diameter and hundreds of microns in thickness. The crystals for different compositions x possess different fundamental op tical absorption edges from 610 to 720 nm. The crystal habit facets are the (001) and {110} planes. These crystals have a polarity and their growth di rection is limited to the [00-1] direction. The lattice defects such as ant iphase domain boundary, stacking fault, inversion twin, and reversion screw almost have not been observed. It is found that these growth characteristi cs are strongly related to the crystal structure in which the structural va cancies are ordered in screw form along the c axis. (C) 2000 American Insti tute of Physics. [S0021-8979(00)04702-2].