Defect chemistry in CdTe < In > crystals

High-temperature electrical measurements are explained in the framework of the theory of quasi-chemical reactions between defects in solids using solu bility data for In in CdTe. The free carrier density is dependent on the so lubility of dopant and the electrons are compensated by both native point d efects (Cd vacancies) and the In-containing associate. Calculated point def ect diagrams give electron densities in good agreement with the measured va lues. (C) 1999 Elsevier Science B.V. All rights reserved.