Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

Authors
King, SW Davis, RF Ronning, C Nemanich, RJ
Citation
Sw. King et al., Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface, J ELEC MAT, 28(12), 1999, pp. L34-L37
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
12
Year of publication
1999
Pages
L34 - L37
Database
ISI
SICI code
0361-5235(199912)28:12<L34:VBDOT(>2.0.ZU;2-H
Abstract
X-ray and UV photoelectron spectroscopies were used to measure the valence band discontinuity at the interface between (0001) 2H-GaN films and 3C-SiC (111) substrates. For GaN films grown by NH3 gas source molecular beam epit axy on (1 x 1) 3C-SiC on-axis surfaces, a type I band alignment was observe d with a valence band discontinuity of 0.5 +/- 0.1 eV. A type I band alignm ent was also determined for GaN films grown on (3 x 3) 3C-SiC, hut with a l arger valence band discontinuity of 0.8 +/- 0.1 eV.