Wd. Sun et al., Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor, J ELEC MAT, 28(12), 1999, pp. L38-L41
Low temperature photoluminescence (PL) measurements on pseudomorphic modula
tion-doped transistors with a low-temperature (LT) GaAs layer in the GaAs b
uffer layer clearly show a decrease in the quantum well PL transition energ
ies compared to a structure with no LT GaAs. Self-consistent calculations o
f the electron and hole bandstructure suggest that the observed increase in
the redshift in PL energies with increasing quantum well-LT GaAs spacing c
an be attributed to band bending induced by the Fermi level pinning at the
undoped GaAs/LT GaAs interface and a novel carrier compensation effect of L
T GaAs.