Shape stabilization and size equalization of InGaAs self-organized quantumdots

Citation
Qh. Xie et al., Shape stabilization and size equalization of InGaAs self-organized quantumdots, J ELEC MAT, 28(12), 1999, pp. L42-L45
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
12
Year of publication
1999
Pages
L42 - L45
Database
ISI
SICI code
0361-5235(199912)28:12<L42:SSASEO>2.0.ZU;2-A
Abstract
We report a simultaneous shape stabilization and size equalization after sh ape transformation of InGaAs self-organized quantum dots (QDs) formed via a fractional monolayer (ML) deposition technique. The density of QD increase s rapidly from an initial value of 110 +/- 10/mu m(2) (at a total depositio n of 4 ML) to 270 +/- 30/mu m(2) (at 5 ML) and saturates at a level of 240 +/- 20/mu m(2) (at 10 ML). At an intermediate stage of 7 ML deposition, bim odal QD height (peaked at 8.5 nm and 14.5 nm) and aspect ratio (peaked at 0 .18 and 0.26) distributions occur, confirming the QD shape transformation f rom a shallower to a steeper shape. The eventual convergence in lateral siz e, height and aspect ratio is the direct result of the simultaneous QD size equalization and shape stabilization. The QD size and shape evolution is a lso substantiated by the Iom temperature (4 K) photoluminescence (PL) data taken from samples with QDs capped by GaAs.