Effects of "fast" rapid thermal anneals on sub-keV boron and BF2 ion implants

Citation
Df. Downey et al., Effects of "fast" rapid thermal anneals on sub-keV boron and BF2 ion implants, J ELEC MAT, 28(12), 1999, pp. 1340-1344
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
12
Year of publication
1999
Pages
1340 - 1344
Database
ISI
SICI code
0361-5235(199912)28:12<1340:EO"RTA>2.0.ZU;2-B
Abstract
The effects of "fast" ramp-rates (up to 425 degrees C/s) and spike anneals are investigated for 0.25 keV, 0.5 keV, and 1.0 keV(11)B+ and for 1.1 and 2 .2 keV BF2 at a dose of 1e15/cm(2). Below an implant energy threshold where no extended defects form, fast ramp-rates become important in minimizing t he thermal diffusion component and reducing the junction depth. Above this implant energy threshold, TED minimizes the advantages of these fast ramp-r ates. Annealing in a low and controlled O-2 ppm in N-2 ambient further redu ces diffusion by minimizing/eliminating oxygen related enhanced diffusion e ffects, while simultaneously optimizing anneal reproducibility and across-t he-water uniformity.