The effects of "fast" ramp-rates (up to 425 degrees C/s) and spike anneals
are investigated for 0.25 keV, 0.5 keV, and 1.0 keV(11)B+ and for 1.1 and 2
.2 keV BF2 at a dose of 1e15/cm(2). Below an implant energy threshold where
no extended defects form, fast ramp-rates become important in minimizing t
he thermal diffusion component and reducing the junction depth. Above this
implant energy threshold, TED minimizes the advantages of these fast ramp-r
ates. Annealing in a low and controlled O-2 ppm in N-2 ambient further redu
ces diffusion by minimizing/eliminating oxygen related enhanced diffusion e
ffects, while simultaneously optimizing anneal reproducibility and across-t
he-water uniformity.