Citation
Z. Farukhi et al., Temperature uniformity optimization for a silicon implant anneal into GaAsusing Opus (TM) simulation software, J ELEC MAT, 28(12), 1999, pp. 1370-1375
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235
→ ACNP
Volume
28
Issue
12
Year of publication
1999
Pages
1370 - 1375
Database
ISI
SICI code
0361-5235(199912)28:12<1370:TUOFAS>2.0.ZU;2-K
Abstract
OPUS(TM), which stands for "Optimized Uniformity Simulator", has been descr
ibed in the Literature as a powerful tool to assist in the optimization of
temperature uniformity in the STEAG Electronic Systems series of rapid ther
mal processors. Historically, this tool has been used extensively for a var
iety of silicon processing. With this simulation, the temperature uniformit
y of 100 mm Si3N4 encapsulated GaAs with a dual silicon implant anneal at 8
47 degrees C, 40 s was optimized to <2 degrees C across the wafer. Ramp rat
es less than or equal to 20 degrees C/s were obtained without slip.