Calculation of emissivity of Si wafers

A computer-software, EMISSIVITY, has been developed to calculate the emissi vity (epsilon) of silicon wafers of any surface morphology, for a given tem perature and dopant concentration. The software uses a combination of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface coatings and multi-reflections wi thin thin wafers. The refractive index and the absorption coefficient are c alculated as a function of temperature and dopant concentration using an em pirical model for an indirect bandgap semiconductor. The results of this mo del are compared with conventional emissivity calculations and experimental data.