We studied the low-temperature energy gap 2 Delta(o) on Bi2Sr2CaCu2O8-delta
(Bi2212) and La2-xSrxCuO4 (La214) systematically over a wide range of dopi
ng level p using STS, break junction tunneling spectroscopy, Raman scatteri
ng and low-T electronic specific heat data. We have also studied the electr
onic specific heat of La214 in the normal state at T > T-c, and confirmed t
hat pseudogap behavior appears at around T*, below which the in-plane resis
tivity rho and magnetic susceptibility chi tend to be slightly suppressed.
Similar suppression appears in rho and chi of Bi2212 below the onset temper
ature of pseudogap T*. It is pointed out in the present study that 2 Delta(
o) is closely related to T* in both Bi2212 and La214 systems; T* similar to
2 Delta(o)/4.3k(B). It is also pointed out that 2 Delta(o) is in almost li
near proportion to k(B)T(max)(<< T*), where T-max is the temperature exhibi
ting a broad peak in chi-T curves and k(B)T(max) can be considered to give
a measure of the effective antiferromagnetic ex change energy J(eff). The a
lpha factors in 2 Delta(o) similar to alpha k(B)T(max) similar to alpha J(e
ff) are similar to 1 for La214 and similar to 2 for Bi2212, respectively. W
e also report that in both Bi2212 and La214 systems T-c roughly scales with
p Delta(o) except in highly doped samples, where T-c proportional to 2 Del
ta(o).