In-situ single chamber arc sputtering process for YCd0.3Ba2Cu3O7-delta superconducting thin films

Citation
Me. Yakinci et al., In-situ single chamber arc sputtering process for YCd0.3Ba2Cu3O7-delta superconducting thin films, J L TEMP PH, 117(3-4), 1999, pp. 645-649
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LOW TEMPERATURE PHYSICS
ISSN journal
00222291 → ACNP
Volume
117
Issue
3-4
Year of publication
1999
Pages
645 - 649
Database
ISI
SICI code
0022-2291(199911)117:3-4<645:ISCASP>2.0.ZU;2-Z
Abstract
Superconducting YCd0.3Ba2Cu3O7-delta thin films have been deposited in-situ onto single crystal MgO substrates using a DC arc-sputtering process. The depositions were carried out in a single chamber deposition system equipped with two target holders. The films deposited at the optimum condition exhi bited strong (001) orientation with a high peak: intensity. The best electr ical properties were achieved to be 90 K for T-e, 81K for T-zero and the tr ansport critical current density J(c) = 675 A/cm(2) at 77K and 2.3x10(3) A/ cm(2) at 4.2 K for the sample deposited at the optimum conditions.