Oxygen diffusion in epitaxial Bi2Sr2CaCu2O8+delta thin films

Superconducting Bi2Sr2 CaCu2O8+delta thin films (T-c similar or equal to 85 K) were prepared on off-c-axis (001) SrTiO3 substrates by pulsed laser dep osition. High quality oriented film growth with a c-axis inclined with resp ect to the surface normal by a tilt angle alpha is found vp to alpha simila r or equal to 15 degrees from SEM, XRD and resistivity measurements. Isothe rmal oxygen diffusion is monitored by in-situ electrical resistance measure ments at temperatures ranging from 200 degrees C...400 degrees C. From the temporal evolution of the resistance the "in-plane" diffusion constant D-ab is determined.