HgBa2-xSrxCuO4+delta (x = 0.06 - 0.45) and Hg1-yVyBa2-xSrxCuO4+delta (x = 0
.16 - 1.1, y = 0.2 - 0.35) series were prepared by the encapsulation method
. In the former series the optimum doping level is achieved by annealing un
der oxygen for x = 0.06 and by annealing under nitrogen for x = 0.45. This
behaviour is explained by different equilibrium oxygen pressures over phase
s with different Sr content. The decrease of T-c is similar to -8 K/x. The
latter series is doped by replacing (HgO2)(2-) groups by (VO4)(3-) tetrahed
ra and optimum doping is achieved by argon annealing.