Photodiodes with low series resistance based on varizonal epitaxial layersof CdxHg1-xTe

Authors
Varavin, VS Vasil'ev, VV Zakhar'yash, TI Dvoretskii, SA Makhailov, NN Ovsyuk, VN Osadchii, VM Sidorov, YG Suslyakov, AO
Citation
Vs. Varavin et al., Photodiodes with low series resistance based on varizonal epitaxial layersof CdxHg1-xTe, J OPT TECH, 66(12), 1999, pp. 1068-1070
Citations number
3
Categorie Soggetti
Optics & Acoustics
Journal title
JOURNAL OF OPTICAL TECHNOLOGY
ISSN journal
10709762 → ACNP
Volume
66
Issue
12
Year of publication
1999
Pages
1068 - 1070
Database
ISI
SICI code
1070-9762(199912)66:12<1068:PWLSRB>2.0.ZU;2-S
Abstract
This paper proposes a method of fabricating planar photodiodes based on var izonal layers of CdxHg1-xTe with low series resistance for purposes of hete rodyne reception. Photodiodes with a long-wavelength photosensitivity limit in the 8-12-mu m region are fabricated, and their parameters are studied. The effect of the composition profile on the quantum efficiency is theoreti cally calculated. (C) 1999 The Optical Society of America. [S1070-9762(99)0 1912-0].