Photodiodes with low series resistance based on varizonal epitaxial layersof CdxHg1-xTe

Citation
Vs. Varavin et al., Photodiodes with low series resistance based on varizonal epitaxial layersof CdxHg1-xTe, J OPT TECH, 66(12), 1999, pp. 1068-1070
Citations number
3
Categorie Soggetti
Optics & Acoustics
Journal title
JOURNAL OF OPTICAL TECHNOLOGY
ISSN journal
10709762 → ACNP
Volume
66
Issue
12
Year of publication
1999
Pages
1068 - 1070
Database
ISI
SICI code
1070-9762(199912)66:12<1068:PWLSRB>2.0.ZU;2-S
Abstract
This paper proposes a method of fabricating planar photodiodes based on var izonal layers of CdxHg1-xTe with low series resistance for purposes of hete rodyne reception. Photodiodes with a long-wavelength photosensitivity limit in the 8-12-mu m region are fabricated, and their parameters are studied. The effect of the composition profile on the quantum efficiency is theoreti cally calculated. (C) 1999 The Optical Society of America. [S1070-9762(99)0 1912-0].