Low temperature processing of SrBi2Ta2O9 thin films by low pressure and ozone annealing treatment

We studied the two step annealing method by which SrBi2Ta2O9 (SBT) thin fil ms were prepared at low temperature. As first step, the SET thin films depo sited on Pt/Ti/SiO2/Si substrates using r.f. magnetron sputtering system we re annealed at 650 degrees C in low pressure. By decreasing the annealing p ressure, the degree of preferred orientation in the ferroelectric cannot on ly increased for the same processing condition but the grain size of SET fi lms also increases. We investigated the ozone annealing treatment as a seco nd step to improve the electrical properties. The property improvement by t he ozone annealing is attributed to the reduction of oxygen defects in the SET film by reactive oxygen atom radicals Remanent polarization (P-r) and c oercive field (E-c) were 2.1 mu C/cm(2), and 20.1 kV/cm, respectively.