Crystalline SrBi2Ta2O9(SBT) thin films have been grown in-situ on amorphous
SET-seed layer/Pt/Ti/SiO2/Si by rf magnetron sputtering. The effects of se
ed layer on the structural and electrical properties of SET firms were inve
stigated. The seed layer used in this experiment was the 50 nm thick amorph
ous SET film fabricated by the same conditions as SET layer deposition exce
pt for substrate temperature. The amorphous SET seed layer was crystallized
into the Bi-layer ferroelectric phase before the in-situ SET deposition at
the high substrate temperature, and thus offered sufficient nucleation sit
es for Bi-layer ferroelectric phase. The disappearance of pyrochlore phase
in SET films deposited on seed layer/Pt/Ti/SiO2/Si indicates that the role
of the seed layer as a diffusion barrier and Bi-incorporation layer. By usi
ng a seed layer, it was possible to obtain the pyrochlore-free SET films wi
th well-developed crystallinity at 600 degrees C without postannealing. The
SET films with seed layer deposited at 600 degrees C showed good ferroelec
tric properties; remnant polarization (2P(r)) of 4.8 mu C/cm(2), coercive f
ield (E-c) of 41.4 kV/cm.