Pulsed laser ablation synthesis and characterization of ferroelectric SrBi2Ta2O9 thin films

Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO 2/Si substrates using pulsed laser deposition. The effects of processing pa rameters such as annealing temperature, annealing time, and laser fluence w ere studied. The optimal condition to obtain high quality films with good e lectrical properties was that the annealing temperature, annealing time, an d laser fluence are 700 degrees C, 1 h, and 1.2 J/cm(2), respectively. Amon g them, the choice of an optimal laser fluence was found to be very importa nt to control electrical properties of the films. In a narrow fluence range of 1.0 similar to 1.5 J/cm(2), films with large remnant polarizations coul d be obtained.