Electrical properties of Bi-layered Bi3TiTaO9 films grown by pulsed laser deposition

Ferroelectric Bi3TiTaO9 (BTT) thin films were grown by pulsed laser deposit ion on Pt/Ti/SiO2/Si substrates using stoichiometric target and 15% Bi-exce ss target. Films grown using the Pi-excess target exhibited better saturati on behaviors and squareness in electrical hysteresis loops than those grown using the stoichiometric target. The films showed good retention character istics and there was nearly no loss in switchable polarization after waitin g time of 1.66 x 10(4) seconds. The remnant polarization degraded to about 60% of the initial value after 3 x 10(7) switching cycles for the films gro wn using Bi-excess target. The films grown using the stoichiometric target became too leaky at the initial stage of switching cycles.