The surface and interface analysis of SnO2/AlnO(3) system

Tin oxide thin film was epitaxially grown on sapphire (0001) by magnetron s puttering deposition. From x-ray diffraction, it is compared with the resul ts of transmission electron microscopy (D. Liu, et al., J. Mater. Res. 10, 1516 (1995)) that tin oxide thin film has variant structure with three-fold symmetries on sapphire substrate. Also, informations of top surface, of su rface morphology and surface hight profile, are obtained by atomic force mi croscopy. Some parameters of interfaces, of thickness of thin film and roug hness of interfaces are determined by synchrotron x-ray reflectivity.