Growth of ferroelectric SbNbO4 thin film by chemical solution deposition method

The stibiotantalite SbNbO4 thin films were grown on Si substrate using the chemical solution deposition method. SbNbO4 phase with highly b-axis prefer red orientation could be obtained from the as-deposoted film by rapid therm al processing at above 700 degrees C in N-2 atmosphere. Though evidently re duced by further heat treatment of conventional furnace annealing at 700 de grees C in N-2 atmosphere, small amount of the second phase in the film was not fully disappeared. Pole-figure measurement showed that the Ib-axis of the film was not exactly normal to the substrate but tilted at about 5 degr ees. From P-V hysteresis measurement the remnant polarization was estimated to be 5 mu C/cm(2), but the hysteresis loop of the film revealed very loss y behavior which might be originated mainly from the second phases in the f ilm.