Formation of bismuth vanadate thin film on TiN and Pt bottom electrode andtheir dielectric properties

The Bi2VO5.5 (BVO) thin films on Si(100) were fabricated by pulsed laser de position (PLD) technique. Pt and TiN thin film were used as a bottom electr odes. The BVO thin film on Pt electrode exhibited the crystallized structur e with 550 degrees C and 1.5 x 10(-2) Torr. And it showed ferroelectricity of the remanent polarization (2P(r)) of 1.3 mu C/cm(2) and the coercive fie ld (E-c) of the film of 2.3 KV/cm at an applied voltage of 5 V, respectivel y. In Ease of TiN electrode, BVO thin film was showed the c-axis oriented a t 450 degrees C and 5 x 10(-2) Torr. And it showed ferroelectricity of P-r = 4.5 mu C/cm(2) and E-c = 3.8 KV/cm at 5 V, respectively. From the observa tion of AFM image, the BVO thin film on TiN electrode exhibited more flat s urface than that on Pt electrode. The dielectric constant of the BVO film o n Pt bottom electrode were constant at about 4 in the applied frequency ran ge between 10(4) and 10(6) Hz.