New integration technologies to remove hydrogen damage on PZT ferroelectric
capacitor were developed. The key technologies are proved to be cleaning s
olution treatment after ferroelectric capacitor etching, TiO2 capping barri
er over ferroelectric capacitor, proper deposition condition of ILD and IMD
, and a following dry treatment to remove atomic hydrogen inside ILD and IM
D layers, and finally optimized recovery anneal to perfectly cure hydrogen
damage. By implementing these technologies in an experimental 64 Kb, double
level metallization, 1T1C FRAM, only 0.2 V shift of coercive voltage exist
ed in the as-etched capacitor after full integration.