Hydrogen resistant FRAM integration technologies for Pt electrode ferroelectric capacitor

New integration technologies to remove hydrogen damage on PZT ferroelectric capacitor were developed. The key technologies are proved to be cleaning s olution treatment after ferroelectric capacitor etching, TiO2 capping barri er over ferroelectric capacitor, proper deposition condition of ILD and IMD , and a following dry treatment to remove atomic hydrogen inside ILD and IM D layers, and finally optimized recovery anneal to perfectly cure hydrogen damage. By implementing these technologies in an experimental 64 Kb, double level metallization, 1T1C FRAM, only 0.2 V shift of coercive voltage exist ed in the as-etched capacitor after full integration.