3-D calculation of copper sputtering yield by Monte Carlo method

In this paper is reported a full three-dimensional simulation of copper spu ttering yield by employing the Monte Carlo method. The sputtering yield of copper atoms as a function of incident energy, incident angle, and atomic e jection distribution has been calculated for a wide range of 10 eV similar to 100 keV. According to our simulation, the sputtering yield of copper exh ibits a strong dependence an the species as well as the amount of energy of the incident ion. For example, the maximum sputtering yield is obtained fo r the incident energy of 10 keV when the incident ion is argon, while the i ncident energy of 1 keV is desirable for the maximum sputtering yield of co pper when hydrogen is incident. The sputtering yield increases with the ang le of incidence and seems to have the maximum value at 70 degrees. As for a n angular distribution of sputtered particles, the number of sputtered atom s in a direction normal to the surface increases with the angle of incidenc e.