Phenomenological damage model in Monte Carlo simulation for predicting B, BF2, As, P and Si implant profiles in silicon

An accurate and efficient phenomenological damage model for 3-Dimensional ( 3D) Monte Carlo (MC) simulation has recently been developed and applied to B, BF2, As, P, and Si self implants into (100) single-crystal silicon. Base d on the newly developed statistical approach for damage accumulation durin g ion implantation at the room temperature, this model assumes non-linear d amage recombination and statistical dechanneling processes due to defect cl usters and amorphous pockets. In our model, dechanneling processes for both projectiles and recoils account for encounters with a point defect, defect clusters, amorphous pockets, and completely amorphized regions. The accura cy of the simulated profiles is evaluated by comparing impurity profiles wi th Secondary Ion Mass Spectroscopy (SIMS) measurements and damage profiles with Rutherford Backscattering Spectroscopy (RBS)/channeling spectra. Our d amage model shows very reasonable agreements with the experiments. Finally, we show the 3D simulation profiles of both phosphorus impurity and its gen erating damage under and around the implanted area.