Shallow dopant implant profiles prediction in silicon using efficient molecular dynamics computer schemes

We simulated dopant profiles of ultra-low energy boron and arsenic implanta tions into silicon by using a new phenomenological local damage accumulatio n model and highly efficient molecular dynamics schemes. The proposed local damage accumulation model is composed of deposited energy, histroy of reco il event and heat conductance in a cell, and also considers the effects of self-relaxation and self-recombination. The results of MDRANGE with local d amage accumulation model agree with the experimental results and results of other simulation. We also simulated various doses and various ultra-low en ergies boron ion and arsenic ion implantation and dopant distribution for s ub 0.1 mu m technologies in real space. We obtained dopant profiles by real ion number corresponding to dose on 0.1 mu m x 0.1 mu m silicon surface in the < 100 > channeling direction. In the cases of both B and As, as ion do se and implant energy increase, dopant profiles are affected much by locall y accumulated damage. Especially, dopant profiles are influenced by locally accumulated damage at doses above 10(14)/cm(2), regardless of implant ener gy.