A 134 mm(2) 3.3 V 128 Mb NAND flash memory with a semi-local self-boostingscheme

Authors
Lee, YT Lee, SS Kwon, SC Seo, YI Yum, JS Lee, DG Lee, JY Yoo, TH Koh, YN Choi, JD Suh, KD
Citation
Yt. Lee et al., A 134 mm(2) 3.3 V 128 Mb NAND flash memory with a semi-local self-boostingscheme, J KOR PHYS, 35, 1999, pp. S879-S883
Citations number
5
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
35
Year of publication
1999
Supplement
S
Pages
S879 - S883
Database
ISI
SICI code
0374-4884(199912)35:<S879:A1M3V1>2.0.ZU;2-Z
Abstract
A 3.3 V 128 Mb NAND type flash memory achieves 2.3 MB/s with an incremental step pulse programming (ISPP) scheme and a 24 MB/s read through-put with i nterleaved data paths. In addition, in order to reduce the programming inte rference for the program inhibited cell, a semilocal, self-boosting (SLSB) of program inhibit voltages scheme is proposed. The device is fabricated wi th a 0.275 mu m CMOS process on a 134 mm(2) die.