Polycrystalline silicon film deposited at 300 degrees C

Fabrication of polycrystalline silicon has been studied by inductively coup led plasma chemical vapor deposition (ICP-CVD) using a SiH2Cl2/SiH4/H-2 gas mixture. The deposition temperature and Hz flow rate were fixed at 300 deg rees C and 6 sccm, respectively. The crystalline quality was improved by in creasing the RF power. The poly-Si deposited at an RF power of 1500 W with gas flow rates of [SiH2Cl2]=0.4 sccm and [SiH4]=0.2 sccm showed a Raman pol ycrystalline volume fraction of 88 %, FWHM of 7 cm(-1), and TEM grain size of similar to 1200 Angstrom.