Optical transitions in InGaN/GaN double heterostructures

We present the results of the optical transitions in InGaN/GaN double heter ostructures (DHs) grown by metal-organic chemical vapor deposition. The emi ssion intensities (I-emi) of the main PL peaks increase superlinearly with excitation intensity (I-exc), following a power-law form, I-emi proportiona l to I-exc(beta). To study the recombination kinetics of InGaN/GaN DHs, we have employed the time-resolved photoluminescence (PL) measurements with va rious delay times and the PL decay times as a function of emission energy.