Influence of crystal originated particles on gate oxide integrity of metal-oxide-semiconductor capacitors with shallow trench isolation

Gate oxide integrity (GOI) of metal-oxide-semiconductor (MOS) capacitors fa bricated on silicon crystals, which have different level of crystal origina ted particles (COPs) and interstitial oxygen (Oi) concentration, was studie d using a full-bar breakdown voltage method. The COP level was controlled b y adjusting crystal pull rate and axial temperature gradient. Our results r evealed that the low COP wafers of neutral-type crystal showed higher GOI y ield than the high COP wafers of vacancy-rich type only at low Oi range (11 similar to 12 ppma). The results suggest that both Oi concentration and CO P levels need to be controlled for the use of low COP neutral-type wafers t o device fabrication.