Short-term degradation of InGaP/GaAs HBTs

In this paper the burn-in effect, which is usually observed in InGaP/GaAs H BTs employing C-doped GaAs base, was examined. In order to investigate the size effect we employed various emitter areas and in order to analyze the d ependence on stress condition we used the various stress current densities and temperatures. From the experimental results, we estimate that the produ ction of current gain peak after the short stress, that is the burn-in effe ct, is caused by the diffusion of H atoms decomposed from C-R complexes int o the extrinsic base surface, and the H atoms passivate the surface states to reduce the surface recombination current.