A novel bias-dependent rational model for MESFET and HEMT devices

Authors
Centurelli, F Pisa, S Tommasino, P Trifiletti, A
Citation
F. Centurelli et al., A novel bias-dependent rational model for MESFET and HEMT devices, MICROW OPT, 24(2), 2000, pp. 102-106
Citations number
16
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
24
Issue
2
Year of publication
2000
Pages
102 - 106
Database
ISI
SICI code
0895-2477(20000120)24:2<102:ANBRMF>2.0.ZU;2-F
Abstract
An accurate model of MESFETs and HEMTs composed of a de section and a multi bias linear dynamic parr is proposed. An automatic procedure to identify mo del parameters has been developed. Errors below 3% over the whale device wo rking region haw been found with GaAs HEMTs up to 50 GHz. (C) 2000 John Wil ey & Sons, Inc.