Transport properties of proton-irradiated GaAs/AlGaAs two-dimensional electron gas structures

Authors
Wang, Q Xu, HQ Omling, P Yang, C Malmqvist, KG
Citation
Q. Wang et al., Transport properties of proton-irradiated GaAs/AlGaAs two-dimensional electron gas structures, NUCL INST B, 160(1), 2000, pp. 33-37
Citations number
18
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
160
Issue
1
Year of publication
2000
Pages
33 - 37
Database
ISI
SICI code
0168-583X(200001)160:1<33:TPOPGT>2.0.ZU;2-Z
Abstract
Transport properties of proton-irradiated, GaAs/AlGaAs two-dimensional elec tron gas structures are investigated. The resistance, the carrier concentra tion and the quantum life time are strongly influenced by the proton irradi ation. For low proton doses, < 5 x 10(11) p(+)/cm(2), the carrier concentra tion is not influenced, while the resistance increases and the quantum life time decreases. For higher doses, the carrier concentration also decreases , and for doses > 5 x 10(12) p(+)/cm(2) the samples become insulating. It i s also found that the transport properties are recovered after the samples are annealed at 500 degrees C for 2 min. (C) 2000 Elsevier Science B.V. All rights reserved.