Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si

Proton-implanted and annealed p-type Si wafers were investigated by using b oth transmission electron microscopy and spreading resistivity probe. The n ovel pn junction [Li et al., Mat. Res. Sec. Symp, Proc. 396 (1996) 745], as obtained by using n-type Si subjected to the process as this work, was not observed in the p-type Si wafers in this work. A drop of superficial resis tivity in the sample was found and is explained by the proposed models inte rpreting the novel pn junction. (C) 2000 Elsevier Science B.V. All rights r eserved.