Deep acceptors in undoped GaN

Authors
Reshchikov, MA Shahedipour, F Korotkov, RY Ulmer, MP Wessels, BW
Citation
Ma. Reshchikov et al., Deep acceptors in undoped GaN, PHYSICA B, 274, 1999, pp. 105-108
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
105 - 108
Database
ISI
SICI code
0921-4526(199912)274:<105:DAIUG>2.0.ZU;2-P
Abstract
Broad photoluminescence bands with maxima at 2.2, 2.5 and 2.9 eV in undoped GaN are studied. The bands are related to three deep accepters, which are characterized by strong electron-phonon coupling. Vibrational properties of the defects are reported. (C) 1999 Elsevier Science B.V. All rights reserv ed.