Optically active hydrogen dimers in silicon

Citation
B. Hourahine et al., Optically active hydrogen dimers in silicon, PHYSICA B, 274, 1999, pp. 176-179
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
176 - 179
Database
ISI
SICI code
0921-4526(199912)274:<176:OAHDIS>2.0.ZU;2-#
Abstract
First-principles calculations are used to explore the structure and propert ies of several defects which are prominent luminescent centers in Si. The t rigonal defects B-41 and B-1/71, which are known to contain two hydrogen at oms in equivalent and inequivalent sites, respectively, are attributed to a hexavacancy containing two H atoms in different configurations. It is sugg ested that the J luminescence centers arises from a stable hexavacancy with out hydrogen atoms. (C) 1999 Elsevier Science B.V. All rights reserved.