The A center binding a single hydrogen atom in crystalline silicon observed by EPR

Citation
P. Johannesen et al., The A center binding a single hydrogen atom in crystalline silicon observed by EPR, PHYSICA B, 274, 1999, pp. 180-183
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
180 - 183
Database
ISI
SICI code
0921-4526(199912)274:<180:TACBAS>2.0.ZU;2-G
Abstract
Electron paramagnetic resonance measurements on proton- and deuteron-implan ted silicon crystals reveal a new signal from a vacancy-type defect with sp in S = 1/2, which is observable only in oxygen-rich material. The signal is strongly temperature-dependent, displaying monoclinic-l symmetry below 180 K and orthorhombic-l symmetry above 240 K in the proton-implanted samples. Resolved proton-hyperfine splittings show that a single hydrogen atom is l ocated similar to 2.5 Angstrom from the silicon atom carrying the dangling bond. The observed properties, including the change of symmetry, allow an u nambiguous identification of the signal with VOH0, the neutral charge state of the monovacancy-oxygen complex (known as the A center) binding one hydr ogen atom. The hydrogen atom is observed to jump readily between two equiva lent sites in the (1 1 0) mirror plane of the defect. (C) 1999 Elsevier Sci ence B.V. All rights reserved.