Microscopic properties of H-2 in Si from the dependence of the 3618.4 cm(-1) line on temperature and stress

The dependence of the 3618.4 cm(-1) line assigned to interstitial Hz in Si on temperature and stress has been studied to probe the structure and micro scopic properties of this defect. The H-2 (and D-2) stretching lines broade n and shift to lower frequency with increasing temperature while the integr ated intensity remains approximately constant. Uniaxial stress results are consistent with triclinic (C-1) symmetry and suggest a near (1 0 0) orienta tion for the H-2 molecular axis. (C) 1999 Elsevier Science B.V. All rights reserved.