Vacancy-hydrogen complexes in group-IV semiconductors

Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2 024.8 and 2061.5 cm(-1) in Ge:H are identified as Ge-H stretch modes of thr ee distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H -SiC: H, indicating that H behaves differently in this material. (C) 1999 E lsevier Science B.V. All rights reserved.