Hydrogen interactions with intrinsic defects in silicon

Citation
Jl. Hastings et al., Hydrogen interactions with intrinsic defects in silicon, PHYSICA B, 274, 1999, pp. 216-219
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
216 - 219
Database
ISI
SICI code
0921-4526(199912)274:<216:HIWIDI>2.0.ZU;2-4
Abstract
The interactions between hydrogen and intrinsic defects in silicon are stud ied using ab initio molecular dynamics simulations in periodic supercells a nd Hartree-Fock in saturated clusters. The two issues discussed here are th e complexes involving one neutral self-interstitial with one to four H's an d the trapping of a single PI at various vacancy aggregates. The binding en ergies, structures, and properties of these defects are calculated. (C) 199 9 Elsevier Science B.V. All rights reserved.