The annealing behaviors of I-I-point defect complexes in Si were investigat
ed to determine their formation or dissociation processes. Specimens were d
oped with H by annealing, in H-2 gas followed by quenching. They were then
irradiated by 3 MV electrons at room temperature. Subsequently, they were a
nnealed isochronally or isothermally. Optical absorption spectra of H-point
defect complexes were measured at 7 K. Due to isochronal annealing, the 21
22, 1838 and 817 cm(-1) peaks disappeared below 200 degrees C, On the other
hand, 2223 and 2166 cm(-1) peaks were formed at above 125 degrees C and 17
5 degrees C, respectively. From isothermal annealing experiments, the bindi
ng energies of H-2(*) (1838 cm(-1) peak) and ( a self-interstitial) 2H comp
lex (1987 and 1990 cm(-1) peaks) were determined to be about 1.5 and 2.0 eV
, respectively. The generation of the 2223 cm(-1) defect, V.4H (V: a vacanc
y), was due to the reaction between Hz and the 2122 cm(-1) defect, V 2H. (C
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