Thermal properties of H-related complexes in electron-irradiated Si doped with H

The annealing behaviors of I-I-point defect complexes in Si were investigat ed to determine their formation or dissociation processes. Specimens were d oped with H by annealing, in H-2 gas followed by quenching. They were then irradiated by 3 MV electrons at room temperature. Subsequently, they were a nnealed isochronally or isothermally. Optical absorption spectra of H-point defect complexes were measured at 7 K. Due to isochronal annealing, the 21 22, 1838 and 817 cm(-1) peaks disappeared below 200 degrees C, On the other hand, 2223 and 2166 cm(-1) peaks were formed at above 125 degrees C and 17 5 degrees C, respectively. From isothermal annealing experiments, the bindi ng energies of H-2(*) (1838 cm(-1) peak) and ( a self-interstitial) 2H comp lex (1987 and 1990 cm(-1) peaks) were determined to be about 1.5 and 2.0 eV , respectively. The generation of the 2223 cm(-1) defect, V.4H (V: a vacanc y), was due to the reaction between Hz and the 2122 cm(-1) defect, V 2H. (C ) 1999 Elsevier Science B.V. All rights reserved.