Hydrogen-induced passivation and modification of radiation defect electrica
l activity in silicon are studied by deep-level transient spectroscopy. Hyd
rogen is incorporated into high-energy electron-irradiated crystals during
chemical etching in acid solution at room temperature, followed by reverse-
bias annealing of p-type samples at 380 K. It is observed that the concentr
ations of major radiation defects (divacancies, A- and K-centers) are reduc
ed in the hydrogen-rich regions, while a number of novel hydrogen-related d
eep-level centers appear. The complexes with the energy level at E-v, + 0.2
8 eV are formed due to hydrogenation of the K-centers. (C) 1999 Elsevier Sc
ience B.V. All rights reserved.