Hydrogen interaction with defects in electron-irradiated silicon

Hydrogen-induced passivation and modification of radiation defect electrica l activity in silicon are studied by deep-level transient spectroscopy. Hyd rogen is incorporated into high-energy electron-irradiated crystals during chemical etching in acid solution at room temperature, followed by reverse- bias annealing of p-type samples at 380 K. It is observed that the concentr ations of major radiation defects (divacancies, A- and K-centers) are reduc ed in the hydrogen-rich regions, while a number of novel hydrogen-related d eep-level centers appear. The complexes with the energy level at E-v, + 0.2 8 eV are formed due to hydrogenation of the K-centers. (C) 1999 Elsevier Sc ience B.V. All rights reserved.