Atomic and electronic structure of hydrogen-passivated double selenium donors in silicon

Citation
Pt. Huy et al., Atomic and electronic structure of hydrogen-passivated double selenium donors in silicon, PHYSICA B, 274, 1999, pp. 239-242
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
239 - 242
Database
ISI
SICI code
0921-4526(199912)274:<239:AAESOH>2.0.ZU;2-6
Abstract
Selenium-hydrogen-related defects in silicon have been investigated by magn etic resonance. Two new electron paramagnetic resonance (EPR) spectra Si-NL 60 and Si-NL61 of selenium-hydrogen complexes were observed. By application of the electron nuclear double resonance (ENDOR) and field scanned ENDOR ( FSE) techniques the symmetry and spin-Hamiltonian parameters of the centers were determined. Based on the obtained information the atomic and electron ic structures of the centers are discussed with two different models: one-c halcogen - one-hydrogen and one-chalcogen - two-hydrogen complexes. (C) 199 9 Elsevier Science B.V. All rights reserved.