Defects incorporating Ge atoms in irradiated Si : Ge

Authors
Sobolev, NA Nazare, MH
Citation
Na. Sobolev et Mh. Nazare, Defects incorporating Ge atoms in irradiated Si : Ge, PHYSICA B, 274, 1999, pp. 271-274
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
271 - 274
Database
ISI
SICI code
0921-4526(199912)274:<271:DIGAII>2.0.ZU;2-U
Abstract
Photoluminescence due to radiation defects in silicon doped with Ge at a co ncentration of 2 x 10(20) cm(-3) and subjected to neutron irradiation and s ubsequent annealing is analyzed and compared to that of silicon crystals co ntaining less or no Ge. Several spectra are ascribed to centers incorporati ng Ge atoms. At concentrations of the order of 10(20) cm(-3) the Ge atoms a re found to be the main sinks for the Frenkel pair components. (C) 1999 Els evier Science B.V. All rights reserved.