Oxygen precipitation in nitrogen-doped Czochralski (NCZ) silicon has been i
nvestigated by one-step and two-step annealing. It was found that nitrogen
in NCZ silicon enhanced oxygen precipitation at lower temperatures ( < 750
degrees C), while it had no influence on oxygen precipitation at higher tem
peratures. We considered that nitrogen could enhance the nucleation of oxyg
en precipitation, rather than its growth. After two-step annealing, the sam
ples were observed by means of a transmission Electronic Microscope (TEM).
New morphology of oxygen precipitates was revealed. The size of the oxygen
precipitates was about 300-500 A. It is suggested that nitrogen interacted
with oxygen to form nitrogen-oxygen complexes as heterogeneous nuclei which
enhanced nucleation of oxygen precipitates. (C) 1999 Elsevier Science B.V.
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