The electronic configuration of substitutional Fe in silicon

Ion implantations of radioactive Mn-57(+) into differently doped silicon si ngle crystals held at 300-600 K have been utilized for Fe-57 Mossbauer stud ies of interstitial and substitutional Fe. Site and charge state assignment s have been made on the basis of the determined hyperfine interaction param eters and Debye temperatures. Substantial fractions of substitutional Mn-57 probe atoms are proposed to occur due to annealing reactions. This site is maintained in the subsequent decay to Fe-57 by less than or equal to 50% o f the Fe-57 atoms, the remainder is displaced by recoil effects into inters titial sites. (C) 1999 Elsevier Science B.V. All rights reserved.