A novel straightforward method to determine the diffusion parameters of pos
itively charged iron in p-type silicon has been developed. The method is ba
sed on application of high-frequency bias pulses to a Schottky diode, provi
ding the total iron ionization and drift in the space charge region. Temper
ature-dependent measurements in the range from 25 degrees C to 180 degrees
C revealed the migration energy of positively charged iron of 0.84 eV, ther
eby supporting the data obtained from the iron-boron pairing. (C) 1999 Else
vier Science B.V. All rights reserved.