Drift of interstitial iron in a space charge region of p-type Si Schottky diode

A novel straightforward method to determine the diffusion parameters of pos itively charged iron in p-type silicon has been developed. The method is ba sed on application of high-frequency bias pulses to a Schottky diode, provi ding the total iron ionization and drift in the space charge region. Temper ature-dependent measurements in the range from 25 degrees C to 180 degrees C revealed the migration energy of positively charged iron of 0.84 eV, ther eby supporting the data obtained from the iron-boron pairing. (C) 1999 Else vier Science B.V. All rights reserved.